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- ISSN: 1872-2105
- E-ISSN: 2212-4020
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Current Development and Patents on High-Brightness White LED for Illumination
- Source: Recent Patents on Nanotechnology, Volume 4, Issue 1, Jan 2010, p. 32 - 40
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- 01 Jan 2010
Abstract
In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
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