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2000
Volume 19, Issue 2
  • ISSN: 1872-2105
  • E-ISSN: 2212-4020

Abstract

Introduction

This work proposes a Double-Gate (DG) MOSFET with a Single Material made of Silicon On-Insulator (SOI). The Lanthanum Oxide material with a high k-dielectric constant has been used as an interface between two gates and the channel. The Monte Carlo analysis has been used to determine the Conduction Band Energy (Ec) profiles and electron sheet carrier densities (n) for a Silicon channel thickness (t) of 10 nm at 0.5 V gate drain-source voltages. The transverse electric fields are weak at the midchannel of DG SOI MOSFETs, where quantum effects are encountered. The Monte Carlo simulation has been confirmed to be effective for high-energy transport. A particle description reproduces the granularity property of the transport for nanoscale modeling.

Methods

This work utilizes a Monte Carlo (MC) Simulation for the proposed Double Gate Single Material Silicon On Insulator MOSFET with (LaO=2 nm) as dielectric oxide on upper and lower gate material. The electrical properties of the DG SOI MOSFETs with Lanthanum Oxide were analyzed using Monte Carlo simulation, including the conduction band energy, electric field, potential distribution, particle movement, and average velocity.

Results

The peak electric field (E) simulation results and an average drift velocity (υ) of 6x105 V/cm and 1.6x107 cm/s were obtained, respectively. The conduction band energy for the operating region of the source has been observed to be 4% to the drain side, which obtained a value of -0.04 eV at the terminal end.

Conclusion

This proposed patent design, such as double-gate SOI-based devices, is the best suggestion for significant scalability challenges. Emerging technologies reach the typical DG SOI MOSFET's threshold performance when their geometrical dimensions are in the nanometer region. This device based on nanomaterial compounds has been more submissive than conventional devices. The nanomaterials usage in the design is more suitable for downscaling and reducing packaging density.

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2025-09-04

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Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process
Recent Pat Nanotechnol 19, 282 (2025); https://doi.org/10.2174/0118722105273476231201073651
/content/journals/nanotec/10.2174/0118722105273476231201073651
/content/journals/nanotec/10.2174/0118722105273476231201073651
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  • Article Type:     Research Article
Keyword(s): conduction band energy; double-gate MOSFET; drift velocity; Lanthanum oxide; monte carlo simulation; packing density; particle transport; potential distribution; quantum effects

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