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2000
Volume 15, Issue 5
  • ISSN: 2210-6812
  • E-ISSN: 2210-6820

Abstract

Introduction

Graphene Nano-Ribbon Tunnel Field-Effect Transistors (GNR TFETs) have emerged as a promising device structure for low-power and high-frequency applications due to their superior electrical properties. Gate engineering in GNR TFETs offers enhanced performance compared to conventional TFETs by optimizing carrier transport characteristics.

Methods

The proposed model is formulated using Poisson’s Equation in a two-dimensional framework, solved analytically using the Parabolic Approximation method. The device structure incorporates two distinct gate metals (M1 and M2) and a high-k dielectric, Hafnium Di-Oxide (HfO), to optimize bandgap narrowing. The analytical results are validated through simulations performed using the Technology Computer-Aided Design (TCAD) Silvaco tool, comparing Surface Potential, Electric Field, and Drain characteristics.

Results

The Double Material Double Gate (DM DG) GNR TFET optimizes the device performance with the help of material and gate engineering and increases surface potential, electric field, and drain current. Due to the higher ION/IOFF ratio and decreased subthreshold swing, the proposed device is suitable for high-frequency applications and improves the switching performance.

Discussion

The developed model demonstrates a sub-threshold swing of 24.49 mV/dec, an ION/IOFF ratio of 108, and a cut-off frequency of 28 GHz. These results align closely with TCAD simulations, confirming the model’s accuracy. The introduction of double-gate and double-material engineering significantly enhances device performance.

Conclusion

The proposed DM DG GNR TFET exhibits superior electrical properties, making it a strong contender for low-power and high-frequency applications. Its improved ION/IOFF ratio and sub-threshold swing highlight its potential in next-generation electronic devices.

© 2025 Bentham Science Publishers
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2025-09-05
2026-03-10

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/content/journals/nanoasi/10.2174/0122106812395101250825120753
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Graphene Nano-Ribbon Tunnel FETs: Improved Analog/RF Performance with Hetero-Dielectric Double Gate Architecture
Nanoscience & Nanotechnology-Asia 15, E22106812395101 (2025); https://doi.org/10.2174/0122106812395101250825120753
/content/journals/nanoasi/10.2174/0122106812395101250825120753
/content/journals/nanoasi/10.2174/0122106812395101250825120753
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  • Article Type:     Research Article
Keyword(s): Ac analysis; Analytical modelling; electric field; graphene nano-ribbon; sub-threshold swing; surface field; TFET

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