Skip to content
2000
Volume 8, Issue 3
  • ISSN: 1872-2105
  • E-ISSN: 2212-4020

Abstract

The recent trends of US patents on the front transparent electrode of thin-film silicon (Si) photovoltaic (PV) devices are reviewed. The various transparent conductive oxide (TCO) materials have been invented to satisfy a multifunctional prerequisite for the front electrode: high electrical conductivity, high optical transparency, effective light trapping, anti-reflection effect, and diffusion barrier. The recent surge of filed patents reflects the great importance of the front TCO technology for high efficiency thin-film Si PV devices. Among the TCO materials, properties of commercially available F-doped tin oxide (SnO2:F)-coated glass substrates are compared. SnO2:F-coated glass substrates share 20-30% of the cost for production of thin-film Si PV modules - evaluated values from mass production at KISCO. Therefore, the cost and technological innovation must be established for cost-effective mass production of large-area thin-film Si multijunction PV modules.

Loading

Article metrics loading...

/content/journals/nanotec/10.2174/1872210508666141022113459
2014-11-01
2025-12-15
Loading full text...

Full text loading...

/content/journals/nanotec/10.2174/1872210508666141022113459
Loading
This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error
Please enter a valid_number test