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2000
Volume 17, Issue 3
  • ISSN: 1876-4029
  • E-ISSN: 1876-4037

Abstract

Background

Emerging technologies aim to enhance processor speed, reduce chip sizes, and minimize power consumption in various electronic devices, including Smartphone’s.

Aim

The demand for improved battery life and low power consumption is indeed a significant challenge in the industry. Carbon nanotube field-effect transistors (CNTFETs) are one of the potential solutions being explored to address these challenges. The implementation of a full adder using CNTFETs can potentially leverage the benefits of these nanoscale devices. This paper introduces a novel approach to designing a 1-bit full adder cell with a focus on low voltage and low power requirements.

Methods

The proposed design combines pass transistor and transmission gate logic in a hybrid multiplexer-based configuration. The proposed full adder circuit utilizes a total of 14 transistors, resulting in a compact and efficient design.

Results

For +0.9 V supply voltage at 32-nm CNTFET technology, the power consumption is 0.0537 μW was found to be extremely low with lower propagation delay 8.7543 Ps and power-delay product (PDP) of 0.4701 aJ by the deliberate use of CMOS inverter and strong transmission gates. The performance analysis of different existing 1-bit full adder designs was compared concerning the newly proposed design in terms of power, delay, and power-delay product (PDP).

Conclusion

The implementation of an N-bit ripple carry adder utilizing the proposed full adder is finally presented. The results obtained from this analysis provide valuable insights into the power efficiency, speed, and overall performance of the proposed design. The performance of the proposed 1-bit full adder circuit was examined with 32-nm CNTFET technology at +0.9 V single-ended supply voltage using the Mentor Graphics Schematic Design Composer CAD tool.

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2025-09-01
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References

  1. MaleknejadM. MohammadiS. NaviK. NajiH.R. HosseinzadehM. A CNFET-based hybrid multi-threshold 1-bit full adder design for energy efficient low power applications.Int. J. Electron.2018105101753176810.1080/00207217.2018.1477205
    [Google Scholar]
  2. GautumM. SharmaS. An insight into various techniques in CNTFET on full adder and gates for efficient outputs.2021International Conference on Simulation, Automation & Smart Manufacturing (SASM)Mathura, India20-21 August 20211610.1109/SASM51857.2021.9841162
    [Google Scholar]
  3. RahinA.B. KadivarianA. RahinV.B. Design of a full swing 20-transistor full adder cell based on CNTFET with high speed and low PDP 30th International Conference on Electrical Engineering (ICEE), Tehran, Iran202254655010.1109/ICEE55646.2022.9827050
    [Google Scholar]
  4. SadeghiA. GhasemiR. GhasemianH. ShiriN. High efficient GDI-CNTFET-based approximate full adder for next generation of computer architectures.IEEE Embed. Syst. Lett.2023151333610.1109/LES.2022.3192530
    [Google Scholar]
  5. GadgilS. VudadhaC. Design of CNTFET-based ternary ALU using 2:1 Multiplexer based approach.IEEE Trans. Nanotechnol.20201966167110.1109/TNANO.2020.3018867
    [Google Scholar]
  6. XuL. QiuC. ZhaoZ. ZhangL. Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors.IEEE Trans. Electron Dev.20196683535354010.1109/TNANO.2020.3018867
    [Google Scholar]
  7. GuptaN. DixitA. Carbon Nanotube Field-Effect Transistors (CNFETs): Structure, fabrication, modeling and performance.Carbon Nanomaterial Electronics: Devices and Applications.Springer2021199214
    [Google Scholar]
  8. DengJ. WongH.S.P. A compact SPICE model for carbon-nanotube field-effect transistors including non-idealities and its application-Part II: Full device model and circuit performance benchmarking.IEEE Trans. Electron Dev.200754123195320510.1109/TED.2007.909043
    [Google Scholar]
  9. PaulB.C. FujitaS. OkajimaM. LeeT.H. WongH.S.P. NishiY. Impact of a process variation on nanowire and nanotube device performance.IEEE Trans. Electron Dev.20075492369237610.1109/TED.2007.901882
    [Google Scholar]
  10. NiranjanN.K. SinghR.B. RizviN.Z. Parametric analysis of a hybrid 1-bit full adder in UDSM and CNTFET technology International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), Chennai, India, 03-05 March20164267427210.1109/ICEEOT.2016.7755523
    [Google Scholar]
  11. WesteN.H.E. HarrisD.M. CMOS VLSI Design: A Circuits and Systems Perspective.4th edBoston, MA, USAAddison-Wesley2020
    [Google Scholar]
  12. KangS-M. LeblebiciY. CMOS Digital Integrated Circuits: Analysis and Design.New York, NY, USATata McGraw-Hill2019
    [Google Scholar]
  13. HassouneI. FlandreD. O’ConnorI. LegatJ.D. ULPFA: A new efficient design of a power-aware full adder.IEEE Trans. Circuits Syst. I Regul. Pap.20105782066207410.1109/TCSI.2008.2001367
    [Google Scholar]
  14. ChangC.H. GuJ.M. ZhangM. A review of 0.18-μm full adder performances for tree structured arithmetic circuits.EEE Trans. Very Large Scale Integr. Syst. (VLSI)2019136686695
    [Google Scholar]
  15. AliotoM. Di CataldoG. PalumboG. Mixed full adder topologies for high-performance low-power arithmetic circuits.Microelectronics J.200738113013910.1016/j.mejo.2006.09.001
    [Google Scholar]
  16. DokaniaV. VermaR. GuduriM. IslamA. Design of 10T full adder cell for ultralow-power applications.Ain Shams Eng. J.2018942363237210.1016/j.asej.2017.05.004
    [Google Scholar]
  17. ShamsA.M. BayoumiM.A. A novel high-performance CMOS 1-bit full-adder cell. IEEE Trans. Circuits Syst., 2 Analog.Digit. Signal Process.200047547848110.1109/82.842117
    [Google Scholar]
  18. TirumalasettyV.R. MachupalliM.R. Design and analysis of low power high-speed 1-bit full adder cells for VLSI applications.Int. J. Electron.2019106452153610.1080/00207217.2018.1545256
    [Google Scholar]
  19. Amini-ValashaniM. AyatM. MirzakuchakiS. Design and analysis of a novel low-power and energy-efficient 18T hybrid full adder.Microelectronics J.201874495910.1016/j.mejo.2018.01.018
    [Google Scholar]
  20. SalehabadM.I. NaviK. HosseinzadehM. Two novel inverter-based ternary full adder cells using CNFETs for energy-efficient applications.Int. J. Electron.20201071829810.1080/00207217.2019.1636306
    [Google Scholar]
  21. ZhangM. GuJ. ChangC-H. A novel hybrid pass logic with static CMOS output drive full-adder cell IEEE International Symposium on Circuits and Systems (ISCAS), Bangkok, Thailand, 25- 28 May2003VV
    [Google Scholar]
  22. GoelS. KumarA. BayoumiM. Design of robust, energy-efficient full adders for deep-sub micrometer design using hybrid-CMOS logic style. IEEE Trans. Very Large Scale Integr (VLSI).Syst.2019141213091320
    [Google Scholar]
  23. Taheri TariH. Dabaghi ZarandiA. ReshadinezhadM.R. Design of a high performance CNTFET-based full adder cell applicable in: Carry ripple, carry select and carry skip adders.Microelectron. Eng.201921511098010.1016/j.mee.2019.110980
    [Google Scholar]
  24. Stanford CNFET Model 2024. Available from:https://nano.stanford.edu/downloads/stanford-cnfet-model
  25. HasanM. HosseinM.J. HossainM. ZamanH.U. IslamS. Design of a scalable low-power 1-bit hybrid full adder for fast computation.IEEE Trans. Circuits Syst. II Express Briefs20206781464146810.1109/TCSII.2019.2940558
    [Google Scholar]
  26. RafieeM. ShiriN. SadeghiA. High-performance 1-bit full adder with excellent driving capability for multistage structures.IEEE Embed. Syst. Lett.2022141475010.1109/LES.2021.3108474
    [Google Scholar]
  27. AnjaneyuluO. ReddyC.V.K. A novel design of full adder cell for VLSI applications.Int. J. Electron.2023110467068510.1080/00207217.2022.2059819
    [Google Scholar]
  28. KimY.B. LombardiF. A novel design methodology to optimize the speed and power of the CNFET circuits. 52nd IEEE international mid west symposium on circuits and systems, Cancun, Mexico, 02-05 August20091130113310.1109/MWSCAS.2009.5235967
    [Google Scholar]
  29. ParameshwaraM.C. SrinivasaiahH.C. Low-power hybrid 1-bit full-adder circuit for energy efficient arithmetic applications.J. Circuits Syst. Comput.2017261175001410.1142/S0218126617500141
    [Google Scholar]
  30. MohammadiM. DolatshahiM. Design and simulation of a low PDP full adder by combining majority function and tgdi technique in CNTFET technology.12th International Conference on Computer and Knowledge Engineering (ICCKE)Mashhad, Iran2022192310.1109/ICCKE57176.2022.9960118
    [Google Scholar]
  31. HashemipourM. MirzaeeR.F. NaviK. 21T ternary full adder based on capacitive threshold logic and carbon nanotube FETs.IEEE Trans. Nanotechnol.20242333834510.1109/TNANO.2024.3386825
    [Google Scholar]
  32. TirumalasettyV.R. BabuluK. NaiduG.A. Efficient 32-nm CNTFET-based 1-Bit Adder: A fast and energy-optimized design.WSEAS Trans. Syst.20242314114810.37394/23202.2024.23.16
    [Google Scholar]
  33. MehwishM. VijayS.K. Review of carbon nanotube field effect transistor for nanoscale regim. Current. Nan.Sci.2024204459
    [Google Scholar]
  34. BonomoC. FortunaL. GiannoneP. GrazianiS. StrazzeriS. A resonant force sensor based on ionic polymer metal composites.Smart Mater. Struct.200817101501410.1088/0964‑1726/17/01/015014
    [Google Scholar]
  35. VudadhaC. Design of CNFET-based ternary conditional sum adders using binary carry propagation.2024 IEEE International Symposium on Circuits and Systems (ISCAS)Singapore, Singapore20241510.1109/ISCAS58744.2024.10558451
    [Google Scholar]
  36. HosseiniS.A. EtezadiS. A novel low-complexity and energy-efficient ternary full adder in nanoelectronics.Circuits Syst. Signal Process.20214031314133210.1007/s00034‑020‑01519‑2
    [Google Scholar]
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