
Full text loading...
The efficiency of a photovoltaic cell is fundamentally determined by its maximum power output, which is closely related to the fill factor. The fill factor, which defines the shape of the I-V characteristics of a solar cell, is influenced by various environmental and internal parameters. Among these, parasitic series and shunt resistances (RSH) are two major factors that significantly affect the fill factor.
Numerical analysis was conducted to investigate the impact of parasitic series and shunt resistances on the I-V characteristics of a solar cell. The analysis focused on how these resistances influence the fill factor. For reference, the highest recorded efficiency and other corresponding parameters of a GaAs (Multicrystalline) solar cell were used.
The results showed that as the value of RSH decreases, the I-V curve flattens, leading to a considerable decrease in the fill factor.
The observed flattening of the I-V curve and the subsequent decrease in the fill factor highlight the critical role of parasitic resistances in determining the efficiency of solar cells. Understanding and mitigating these parasitic effects can lead to significant improvements in the performance of GaAs solar cells.
The findings from this numerical analysis provide valuable insights into the impact of parasitic resistances on the efficiency of GaAs solar cells. These results are expected to guide future implementations aimed at enhancing the efficiency of GaAs solar cells.