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2000
Volume 21, Issue 6
  • ISSN: 1573-4137
  • E-ISSN: 1875-6786

Abstract

Introduction

Due to its magnetic and semiconductor properties, VO has shown tremendous potential in resistive switching memory.

Methods

This paper investigates the resistive mechanism of oxygen vacancies in VO. The formation energies of different oxygen vacancies are calculated.

Results

The results show that oxygen vacancies tend to form single-component conductive filaments. In mixed oxygen vacancies clusters, the charge transfer characteristics and density of states of the VO-V13 vacancies are the most significant, which is consistent with the analysis of formation energy data.

Conclusions

The charge transfer of cluster oxygen vacancies was calculated, showing that V atoms directly connected to oxygen vacancies tend to lose electrons, while adjacent oxygen atoms are more likely to gain electrons. In VO-V12 and VO-V13, the number of electrons obtained by O2 and O16 exceeds the average by 36.4% and 33.2%. Thus, the formation of oxygen vacancies effectively improves the resistance characteristics of the VO.

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2025-09-30

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A Study on Oxygen Vacancy Resistance Mechanism of V2O5
Curr. Nanosci. 21, 1049 (2025); https://doi.org/10.2174/0115734137333910241009071115
/content/journals/cnano/10.2174/0115734137333910241009071115
/content/journals/cnano/10.2174/0115734137333910241009071115
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  • Article Type:     Research Article
Keyword(s): conductive filaments; First principles; oxygen vacancy; resistance mechanism; RRAM; vanadium pentoxide

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