Thermal Oxidation
- By Kunihiro Suzuki1
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View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 3 , pp 101-119
- Publication Date: November 2013
- Language: English
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Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO2/Si interface. This model gives simple time dependence of growing SiO2 layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO2/Si interface.
Hardbound ISBN:
9781608057931
Ebook ISBN:
9781608057924
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/content/books/9781608057924.chapter-5dcterms_subject,pub_keyword-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData105
/content/books/9781608057924.chapter-5
dcterms_subject,pub_keyword
-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData
10
5
Chapter
content/books/9781608057924
Book
false
en
