Segregation

- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 3 , pp 120-127
- Publication Date: November 2013
- Language: English
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Segregation, Page 1 of 1
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Segregation is a coefficient defined as the ratio of impurity concentrations at both sides of two different layers, which influences the diffusion profiles. However, the ratio is rarely in thermal equilibrium in general cases. Hence, the evaluation of the value of the segregation is difficult. It is found that the thermal equilibrium of segregation has been established in the redistribution profile of impurities in oxidized polycrystalline Si (polysilicon) because the diffusion coefficient is much larger than that in Si. The redistribution model is derived, and related segregation values are evaluated.
Hardbound ISBN:
9781608057931
Ebook ISBN:
9781608057924
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/content/books/9781608057924.chapter-6dcterms_subject,pub_keyword-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData105
/content/books/9781608057924.chapter-6
dcterms_subject,pub_keyword
-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData
10
5
Chapter
content/books/9781608057924
Book
false
en
