Analytical Model for Two-Dimensional Profile in MOSFET's
- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 2 , pp 18-31
- Publication Date: November 2013
- Language: English
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Two-dimensional profile model for ion implantation at high tilt angle was derived, in order to describe the pocket ion implantation of MOSFETs. Then we can generate two-dimensional profile of ion implantation for the full MOS process neglecting diffusion of dopants, in order to predict electrical characteristic of MOSFETs.
Hardbound ISBN:
9781608057917
Ebook ISBN:
9781608057900
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