Ion Implantation Profile in Patterned Substrate
- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 2 , pp 3-17
- Publication Date: November 2013
- Language: English
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We treat analytical models for two-dimensional profiles in patterned substrates. It is shown that the doses in the scaled MOSFETÂ’s gates become significantly smaller that the doses in the large gate. We should therefore be careful about ion implantation conditions in scaled devices considering the two-dimensional effects. We further evaluated the relationship between vertical and lateral junction depth using the model.
Hardbound ISBN:
9781608057917
Ebook ISBN:
9781608057900
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