Three-Dimensional Ion Implantation Profile Based on Rp Line Concept
- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 2 , pp 32-53
- Publication Date: November 2013
- Language: English
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We first simplify the existing model for two-dimensional profiles without losing accuracy. Then, a geometrical appreciation is given to the model. Next, a Rp line concept is generated from the simplified model. We can generate three-dimensional ion implantation profiles related to the Rp line for various device structures, and demonstrate that this procedure is applied to three-dimensional ion implantation profiles in FinFET. Furthermore, the models are extended to make Pearson function available.
Hardbound ISBN:
9781608057917
Ebook ISBN:
9781608057900
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