Analytical Consideration Of Quantum-Confined Stark-Effect and Interband Optical Transitions in Semiconductor Quantum Well

In the regime of strong quantization single-electron states are considered theoretically in the wide-band semiconductor film, placed in a homogeneous electrostatic field. For a certain range of values of the external field, explicit expressions were obtained for the energy spectrum and envelope wave functions of charge carriers in the film. The dependence of the parameters of direct interband electro-optical transitions in the film on the intensity of the external field and the effective mass of charge carriers was also considered.