Impact of Nano-Texturing in GaN-based Light Emitting Diodes by Self-Assembled Silver Microspheres as Etch Mask

We demonstrate a facile one-step thermal conversion method for the formation of self-assembled three dimensional silver (Ag) microspheres. The total conversion of Ag microspheres from the source materials at an elevated temperature is confirmed via various characterization techniques. The density of self-assembled Ag microspheres can be controlled by adjusting the precursor solution concentration. p-GaN nano-texturing is performed using an inductively coupled plasma (ICP) treatment, with the help of self-assembled Ag microspheres as a mask. The light extraction efficiency of the p-GaN nano-textured light emitting diode (LED) shows a significant improvement of ˜25% over that of conventional LEDs at an injection current of 20 mA.