Direct Current Voltage Stress-Induced Degradation in Thin-Film Transistors
- Authors: Meng Zhang1, Mingxiang Wang2
-
View Affiliations Hide Affiliations1 College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China 2 Department of Microelectronics, Soochow University, Suzhou 215006, China
- Source: Thin-Film Transistor Reliability , pp 129-174
- Publication Date: April 2025
- Language: English
Preview this chapter:
Direct Current Voltage Stress-Induced Degradation in Thin-Film Transistors, Page 1 of 1
< Previous page | Next page > /docserver/preview/fulltext/9789815322613/chapter-4-1.gif
This chapter investigates the degradation induced by direct current（DC）voltage stress in thin-film transistors (TFTs). It provides a detailed examination of gate bias stress, hot-carrier effect, and self-heating effect, discussing their impact on silicon-based and metal oxide TFTs. The chapter aims to summarize and analyze the influence of these degradation mechanisms on the performance and reliability of TFT devices.
Hardbound ISBN:
9789815322620
Ebook ISBN:
9789815322613
-
From This Site
/content/books/9789815322613.chapter-4dcterms_subject,pub_keyword-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData105
/content/books/9789815322613.chapter-4
dcterms_subject,pub_keyword
-contentType:Journal -contentType:Figure -contentType:Table -contentType:SupplementaryData
10
5
Chapter
content/books/9789815322613
Book
false
en
