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2000

Abstract

This textbook provides an overview of next-generation Field-Effect Transistor (FET) technologies at the intersection of nanoelectronics, device miniaturization, and advanced applications. With a special emphasis on the evolution of semiconductor engineering, the book examines the shift from conventional CMOS to emerging FET architectures aimed at extending Moore ' s Law.

Across 18 chapters, the book explores Tunnel FETs (TFETs), carbon-based FETs, and 2D-material transistors, with discussions on performance, scalability, and reliability. It features detailed analyses of advanced device structures such as HJ-DGV-TFETs, dual-pocket step-channel TFETs, and AlGaN/GaN HEMTs, as well as their roles in memory, photonics, and biomedical systems. The use of nanomaterials in biosensor integration and digital circuit design is also a key theme.

Key features:

-Traces technological transitions from CMOS to novel FETs

-Examines nanoengineered device architectures and materials

-Investigates applications in optoelectronics, memory, and biosensing

-Analyzes simulation approaches for performance optimization

-Highlights interdisciplinary innovations across electronics and healthcare.

References

/content/books/9789815313802
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