Amorphous Layer Thickness
- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 2 , pp 78-120
- Publication Date: November 2013
- Language: English
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A parameter of thorough dose, Φa/c is introduced to express continuous amorphous layer thickness. Φa/c is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer da is expressed by Φa/c combined with parameters for ion implantation profiles. Φa/c is independent of ion implantation conditions but depends on impurities. Φa/c for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict da over wide ion implantation conditions.
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9781608057917
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9781608057900
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