Dose Loss
- By Kunihiro Suzuki1
-
View Affiliations Hide Affiliations1 Fujitsu limited Minatoku kaigan 1 11-1 Tokyo, Japan.
- Source: Ion Implantation and Activation: Volume 2 , pp 69-77
- Publication Date: November 2013
- Language: English
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Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.
Hardbound ISBN:
9781608057917
Ebook ISBN:
9781608057900
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