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2000
Volume 3, Issue 1
  • ISSN: 2210-6863
  • E-ISSN: 1877-6124

Abstract

A measurement system is presented for evaluating the characteristics of both sides of an LED wafer using electroluminescence (EL). Integrating spheres (IS), photodiodes, pico-ammeters, spectrometers were installed in the front and rear sides to measure optical characteristics with minimum EL loss. A probe was connected to a source meter with a thin wire and attached using a transparent fixture in the front IS. The EL characteristics in a measuring point were peak wavelength, FWHM (full width at half maximum), forward current, forward voltage and reverse current. EL images were created by combining the motion of a stage and the EL characteristics. The correlation between the EL and the chip-level tests and the repeatability test showed that the dual measurement is useful for LED manufacturing. Our patents were applied to install the probe and create the EL image.

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/content/journals/rptsp/10.2174/2210686311303010007
2013-04-01
2025-10-27
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/content/journals/rptsp/10.2174/2210686311303010007
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  • Article Type:
    Research Article
Keyword(s): EL imaging; Electroluminescence; epi-wafer; LED manufacturing; Optical spectrum
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