Engineering TFET Biosensors: Design Optimization, Analytical Modeling, and Radiation Considerations
- Authors: Priyanka Goma1, Ashwani K. Rana2
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View Affiliations Hide Affiliations1 Department of Electronics and Communication Engineering, National Institute of Technology, Hamirpur, Himachal Pradesh, India 2 Department of Electronics and Communication Engineering, National Institute of Technology, Hamirpur, Himachal Pradesh, India
- Source: Semiconductor Nanoscale Devices: Materials and Design Challenges , pp 263-285
- Publication Date: March 2025
- Language: English
Engineering TFET Biosensors: Design Optimization, Analytical Modeling, and Radiation Considerations, Page 1 of 1
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This chapter provides a thorough examination of the key factors influencing the development and functionality of Tunnel Field-effect Transistor (TFET) biosensors. It focuses on three main areas: design techniques, analytical modeling for DNA detection, and the impact of radiation-induced effects, particularly X-rays, on TFET sensitivity. Commencing with an overview of TFET biosensors and their importance in biomedical and environmental sensing, the chapter delves into the complexities of design strategies aimed at enhancing sensor performance. It scrutinizes various design methodologies, such as material selection, device architecture, and surface functionalization, highlighting their effects on sensitivity, selectivity, and stability. Following this, the chapter investigates tailored analytical modeling approaches for TFET biosensors in DNA detection applications. It elucidates the theoretical foundations and numerical methods governing DNA sensing mechanisms, encompassing electrostatics modeling, charge transport simulations, and device-level simulations. Practical insights into amalgamating analytical models with empirical data enable the refinement of TFET biosensors for DNA detection, enhancing their precision and dependability. Moreover, the chapter delves into the repercussions of ionizing radiation, specifically X-rays, on TFET biosensor performance. It explores radiation-induced phenomena, such as shifts in threshold voltage, damage to gate oxide, and alterations in sensitivity, elucidating their implications for sensor functionality in radiation-rich settings. Strategies for mitigating these effects and bolstering sensor resilience are discussed to ensure consistent operation across diverse application scenarios.
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