Materials Used in the Design of Semiconductor Devices

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The design and advancement of semiconductor devices are fundamentally rooted in the diverse range of materials utilized, each selected for its unique properties and contributions to device performance. This chapter explores the necessity and history of semiconductor materials, tracing their evolution and wide-ranging applications. Central to this discussion are the elemental semiconductors derived from the periodic table, focusing on silicon, germanium, and gray tin, which have historically underpinned the semiconductor industry. Also, this chapter differentiates between intrinsic and extrinsic semiconductors, highlighting their respective roles and characteristics in device functionality. Intrinsic semiconductors, with their pure form, contrast with extrinsic semiconductors, which are doped to enhance specific electrical properties, catering to various application needs. Furthermore, the study delves into compound semiconductor materials, showcasing their importance in modern technology. Compounds, like silicon carbide, boron nitrate, red selenium, boron phosphide, and boron arsenide, are examined for their exceptional electrical and thermal properties. The chapter also discusses aluminum-based compounds, including aluminum nitride, phosphide, and arsenide, and their applications in high-power and high-frequency devices. The study extends to gallium-based compounds, like gallium nitride, phosphide, and arsenide, known for their high electron mobility and applications in optoelectronics. Additionally, zinc and cadmium compounds, such as zinc oxide, cadmium arsenide, zinc phosphide, and zinc antimonide, are analyzed to enhance device performance and efficiency. This comprehensive study underscores the critical role of diverse semiconductor materials in the ongoing innovation and optimization of electronic, optoelectronic, and power devices, meeting the escalating demands of modern technology.