Next-Generation Energy Storage and Optoelectronic Nanodevices
- Authors: Debabrata Panda1, Krunal M. Gangawane2
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View Affiliations Hide AffiliationsAffiliations: 1 Department of Chemical Engineering, National Institute of Technology Rourkela, Rourkela 769008, Odisha, India 2 Department of Chemical Engineering, National Institute of Technology Rourkela, Rourkela-769008, Odisha, India
- Source: Applications of Nanomaterials in Energy Storage and Electronics , pp 223-239
- Publication Date: August 2022
- Language: English
Among the variety of nanostructures that have been explored as a favorable material for the application of higher energy storage devices as supercapacitors, catalysts in high-performance batteries, proton exchange membranes in fuel cells, optoelectronic devices, and so on, 2D amp; 3D nanostructure of graphene-based derivatives, metal oxides and dichalcogenides have received the most potential attention for building high-performance nano-devices due to their extraordinary properties. Over the past decade, several efforts have been implemented to design, develop, and evaluate electrodes' structures for enhanced energy storage devices. A significant modification has achieved the remarkable performance of these synthesized devices in terms of energy storage capacity, conversion efficiency, and the reliability of the devices to meet practical applications' demands. Light-emitting diode (LED) in quantum well or quantum dots is considered an important aspect for an enhanced optoelectronic device. This current study outlines different 3D nanostructures for next generation energy storage devices. It provides a systematic summary of the advantages of 3D nanostructures in perspective to next-generation energy storage devices, photocatalytic devices, solar cells, a counter electrode for metal-ion batteries, and supercapacitors, optoelectronic nano-devices.
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