Tuneable Properties of Aluminium Oxynitride Thin Films
- Authors: Joel Borges1, Nuno P. Barradas2, Eduardo Alves3, Nicolas Martin4, Marie France Beaufort5, Sophie Camelio6, Dominique Eyidi7, Thierry Girardeau8, Fabien Paumier9, Jean-Paul Rivière10, Filipe Vaz11, Luis Marques12
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View Affiliations Hide Affiliations1 Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal 2 Instituto Superior Técnico/ITN, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém, Portugal 3 Instituto Superior Técnico/ITN, Universidade Técnica de Lisboa, E.N. 10, 2686-953 Sacavém, Portugal 4 Institut FEMTO-ST, 32, avenue de l’observatoire, 25044 Besançon, France 5 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 6 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 7 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 8 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 9 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 10 Institut PRIME - UPR 3346 CNRS-Université de Poitiers - ENSMA, Département de Physique et Mécanique des Matériaux Bât. SP2MI - Téléport 2, BP 30179 F86962 Futuroscope Chasseneuil Cedex – France 11 Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal 12 Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal
- Source: Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications , pp 195-229
- Publication Date: June 2013
- Language: English
Tuneable Properties of Aluminium Oxynitride Thin Films, Page 1 of 1
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In this subchapter is discussed some characteristics and properties of AlOxNy thin films produced by reactive DC magnetron sputtering. The films were deposited using Ar as working gas and a reactive gas mixture of N2+O2 (17:3). The reactive gas flow was varied in order to produce a wide range of chemical compositions. Sub-stoichiometric AlOxNy films, with CO+N/CAl atomic ratios up to 0.85 were produced, with Al-type crystalline structure. Transmission electron microscopy (TEM) analysis and X-ray photoelectron spectroscopy (XPS) spectra suggests that the films are a percolating network, composed by aluminium nanocrystals with different shapes and sizes embedded in an oxide/nitride matrix. The particular composition, structure and morphology of the films results in very different electrical properties, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport, as well as distinct optical responses, such as an unusual large broadband absorption for some films.
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